*rohs directive 2002/95/ec jan 27 2003 including annex march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series tisp3240f3, tisp3260f3, tisp3290f3,tisp3320f3,TISP3380F3 high-voltage dual bidirectional thyristor overvoltage protectors d package (top view) description these high-voltage dual bidirectional thyristor protectors are designed to protect ground backed ringing central office, access and customer premise equipment against overvoltages caused by lightning and a.c. power disturbances. offered in five voltage varian ts to meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surg es in both polarities. overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to switch. the high crowbar holding current helps prevent d.c. latchup as the current subsides. these monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover c ontrol and are virtually transparent to the system in normal operation. how to order ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge planar passivated junctions low off-state current <10 ? rated for international surge wave shapes 1 2 3 45 6 7 8 g g g g nc t r nc nc - no internal connection device symbol g tr sd3xaa terminals t, r and g correspond to the alternative line designators of a, b and c device v drm v v (bo) v 3240f3 180 240 3260f3 200 260 3290f3 220 290 3320f3 240 320 3380f3 270 380 waveshape standard i tsp a 2/10 s gr-1089-core 175 8/20 s iec 61000-4-5 120 10/160 s fcc part 68 60 10/700 s itu-t k.20/21 fcc part 68 50 10/560 s fcc part 68 45 10/1000 s gr-1089-core 35 .......................................ul recognized component *rohs compliant device packa ge carrier tisp3xxxf3 d, small-outline tape and reeled tisp3xxxf3dr-s insert xxx value corresponding to protection voltages of 240 through 380 order as
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series absolute maximum ratings, t a = 25 ? (unless otherwise noted) rating symbol value unit repetitive peak off-state voltage, 0 c < t a < 70 c 3240f3 3260f3 3290f3 3320f3 3380f3 v drm 180 200 220 240 270 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 1/2 (gas tube differential transient, 1/2 voltage wave shape) 350 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 175 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resistor) 90 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 120 10/160 (fcc part 68, 10/160 voltage wave shape) 60 4/250 (itu-t k.20/21, 10/700 voltage wave shape, simultaneous) 55 0.2/310 (cnet i 31-24, 0.5/700 voltage wave shape) 38 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 50 5/320 (fcc part 68, 9/720 voltage wave shape, single) 50 10/560 (fcc part 68, 10/560 voltage wave shape) 45 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 35 non-repetitive peak on-state current, 0 c < t a < 70 c (see notes 1 and 3) 50 hz, 1 s i tsm 4.3 a initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/ s junction temperature t j -65 to +150 c storage temperature range t stg -65 to +150 c notes: 1. further details on surge wave shapes are contained in the applications information section. 2. initially, the tisp device m ust be in thermal equilibrium with 0 c < t j <70 c. the surge may be repeated after the tisp device returns to its initial conditions. 3. above 70 c, derate linearly to zero at 150 c lead temperature. electrical characteristics for r and t terminal pair, t a = 25 ? (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d = 2v drm , 0 c march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series electrical characteristics for t and g or r and g terminals, t a = 25 ? (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d = v drm , 0 c march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series parameter measurement information figure 1. voltage-current characteristics for any terminal pair -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) i (br) v (br) v (br)m v drm i drm v d i d i h i t v t i tsm i tsp -i quadrant iii switching characteristic pmxxaa
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and g or t and g terminals figure 2. figure 3. figure 4. figure 5. t j - junction temperature - c -25 0 25 50 75 100 125 150 0.1 0.01 0.001 1 10 100 tc3haf v d = -50 v v d = 50 v t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakdown voltages 0.9 1.0 1.1 1.2 tc3hai v (bo) v (br) v (br)m t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakdown voltages 0.9 1.0 1.1 1.2 tc3haj v (bo) v (br) v (br)m v t - on-state voltage - v 23456789 110 i t - on-state current - a 1 10 100 tc3hal -40 c 150 c 25 c off-state current vs junction temperature off-state current vs on-state voltage normalized breakdown voltages vs junction temperature normalized breakdown voltages vs junction temperature positive polarity normalized to v (br) i (br) = 100 a and 25 c negative polarity normalized to v (br) i (br) = 100 a and 25 c tisp3xxxf3 (hv) overvoltage protector series
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series typical characteristics - r and g or t and g terminals figure 6. figure 7. figure 8. figure 9. t j - junction temperature - c -25 0 25 50 75 100 125 150 i h , i (bo) - holding current, breakover current - a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1.0 tc3hah i (bo) i h di/dt - rate of rise of principle current - a/ s 0 001 0 01 0 1 1 10 100 normalized breakover voltage 1.0 1.1 1.2 1.3 tc3hab positive negative terminal voltage - v 0 1 1 10 off-state capacitance - pf 10 100 tc3hae 50 positive bias negative bias t j - junction temperature - c -25 0 25 50 75 100 125 150 off-state capacitance - pf 1 10 100 tc3had 500 terminal bias = 0 terminal bias = 50 v terminal bias = -50 v holding current & breakdown current vs junction temperature off-state capacitance vs junction temperature normalized breakover voltages vs junction temperature off-state capacitance vs terminal voltage
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series typical characteristics - r and g or t and g terminals figure 10. decay time - s 10 100 1000 maximum surge current - a 10 100 1000 tc3haa 2 surge current vs decay time
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series typical characteristics - r and t terminals figure 11. figure 12. figure 13. t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0001 001 01 1 10 100 tc3hag v d = 50 v t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakdown voltages 0.9 1.0 1.1 1.2 tc3hak v (bo) v (br) v (br)m both polarities normalized to v (br) i (br) = 100 a and 25 c di/dt - rate of rise of principle current - a/ s 0001 001 01 1 10 100 normalized breakover voltage 1.0 1.1 1.2 1.3 tc3hac off-state current vs junction temperature normalized breakdown voltages vs junction temperature normalized breakover voltages vs rate of rise of principle current
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series thermal information figure 14. figure 15. t - current duration - s 0 1 . 1 10 100 1000 i trms - maximum non-recurrent 50 hz current - a 1 10 ti3haa v gen = 350 vrms r gen = 20 to 250 t - power pulse duration - s 00001 0001 001 01 1 10 100 1000 z j a - transient thermal impedance - c/w 1 10 100 ti3maa maximum non-recurring 50 hz current vs current duration thermal response ?
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series applications information electrical characteristics the electrical characteristics of a tisp device are strongly dependent on junction temperature, t j . hence, a characteristic value will depend on the junction temperature at the instant of measurement. the values given in this data sheet were measured on commerci al testers, which generally minimize the temperature rise caused by testing. application values may be calculated from the paramet ers temperature coefficient, the power dissipated and the thermal response curve, z (see m. j. maytum, ?ransient suppressor dynamic parameters.?ti technical journal, vol. 6, no. 4, pp. 63-70, july-august 1989). lightning surge wave shape notation most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50 % of the maximum amplitude. the notation used for the wave shape is amplitude, rise time/decay time . a 50 a, 5/310 ? wave shape would have a peak current value of 50 a, a rise time of 5 ? and a decay time of 310 ?. the tisp surge current graph comprehends the wave shapes of commonly used surges. generators there are three categories of surge generator type, single wave shape, combination wave shape and circuit defined. single wave shape generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 ? open ci rcuit voltage and short circuit current). combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g. 1.2/50 ? open circuit voltage and 8/20 ? short circuit current). circuit specified generators usu ally equate to a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 ? open circui t voltage generator typically produces a 5/310 ? short circuit current). if the combination or circuit defined generators operate into a finite resis- tance, the wave shape produced is intermediate between the open circuit and short circuit values. current rating when the tisp device switches into the on-state it has a very low impedance. as a result, although the surge wave shape may be defined in terms of open circuit voltage, it is the current wave shape that must be used to assess the required tisp surge capability. as an example, the itu-t k.21 1.5 kv, 10/700 ? open circuit voltage surge is changed to a 38 a, 5/310 ? current waveshape whe n driving into a short circuit. thus, the tisp surge current capability, when directly connected to the generator, will be found for the itu-t k.21 waveform at 310 ? on the surge graph and not 700 ?. some common short circuit equivalents are tabulated below: any series resistance in the protected equipment will reduce the peak circuit current to less than the generators?short circui t value. a 1 kv open circuit voltage, 100 a short circuit current generator has an effective output impedance of 10 ? (1000/100). if the equipment has a series resistance of 25 ? , then the surge current requirement of the tisp device becomes 29 a (1000/35) and not 100 a. standard open circuit voltage short circuit current itu-t k.21 1.5 kv, 10/700 s 37.5 a, 5/310 s itu-t k.20 1 kv, 10/700 s 25 a, 5/310 s iec 61000-4-5, combination wave generator 1.0 kv, 1.2/50 s 500 a, 8/20 s telcordia gr-1089-core 1.0 kv, 10/1000 s 100 a, 10/1000 s telcordia gr-1089-core 2.5 kv, 2/10 s 500 a, 2/10 s fcc part 68, type a 1.5 kv, <10/>160 s 200 a,<10/>160 s fcc part 68, type a 800 v, <10/>560 s 100 a,<10/>160 s fcc part 68, type b 1.5 kv, 9/720 s 37.5 a, 5/320 s
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series applications information protection voltage the protection voltage, (v (bo) ), increases under lightning surge conditions due to thyristor regeneration. this increase is dependent on the rate of current rise, di/dt, when the tisp device is clamping the voltage in its breakdown region. the v (bo) value under surge conditions can be estimated by multiplying the 50 hz rate v (bo) (250 v/ms) value by the normalized increase at the surge s di/dt (figure 7 ). an estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. as an example, the itu-t k.21 1.5 kv, 10/700 ? surge has an average dv/dt of 150 v/?, but, as the rise is exponential, the in itial dv/dt is higher, being in the region of 450 v/?. the instantaneous generator output resistance is 25 ? . if the equipment has an additional series resistance of 20 ? , the total series resistance becomes 45 ? . the maximum di/dt then can be estimated as 450/45 = 10 a/?. in practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resist ance of the tisp breakdown region. capacitance off-state capacitance the off-state capacitance of a tisp device is sensitive to junction temperature, t j , and the bias voltage, comprising of the d.c. voltage, v d , and the a.c. voltage, v d . all the capacitance values in this data sheet are measured with an a.c. voltage of 100 mv. the typical 25 ? variation of capacitance value with a.c. bias is shown in figure 17. when v d >> v d , the capacitance value is independent on the value of v d . the capacitance is essentially constant over the range of normal telecommunication frequencies. figure 16. v d - rms ac test voltage - mv 1 10 100 1000 normalized capacitance 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 aixxaa normalized to v d = 100 mv dc bias, v d = 0 normalized capacitance vs rms ac test voltage
march 1994 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp3xxxf3 (hv) overvoltage protector series applications information longitudinal balance figure 1 7 shows a three terminal tisp device with its equivalent ?elta?capacitance. each capacitance, c tg , c rg and c tr , is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge. if wire r is biased at a larger potenti al than wire t, then c tg >c rg . capacitance c tg is equivalent to a capacitance of crg in parallel with the capacitive difference of (c tg -c r g). the line capacitive unbalance is due to (c tg -c rg ) and the capacitance shunting the line is c tr +c rg /2. all capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitiv e unbalance effects. simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitan ce via the third terminal is included. figure 17. c tg c rg c tr equipment t r g (c tg -c rg ) c rg c tr equipment t r g c rg c tg > c rg equivalent unbalance aixxab ?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries.
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